Features

• Post Bonding after Aligning & Pre-bonding 
• Electrode metal/Bump:  Cu, Au, Sn, CuSn, AuSn, AgSn                          
• Automatic Parallelism adjustment function  : Excellent pressing uniformity
• Anti – Vibration Structure

  Specifications

• Wafer Size : up to 12inch
• Aligner & Pre-bonder in vacuum or atm.

             - Align Accuracy :  ≤±2um

             - Throughput : 15 wafers/h

• Post Bonder(Gang Bonder) :

              - Throughput of Thermal compression wafer bonder : 3 wafers/h

              - Throughput of Laser Eutectic bonder : 20 wafers/h